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TYPICAL PERFORMANCE CURVES (R) APT150GN120J 1200V APT150GN120J E G C E Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in gate resistor ensures extremely reliable operation, even in the event of a short circuit fault. Low gate charge simplifies gate drive design and minimizes losses. S OT 22 7 ISOTOP (R) "UL Recognized" file # E145592 * 1200V Field Stop * Trench Gate: Low VCE(on) * Easy Paralleling * Intergrated Gate Resistor: Low EMI, High Reliability C G E Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS MAXIMUM RATINGS Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 110C Pulsed Collector Current 1 All Ratings: TC = 25C unless otherwise specified. APT150GN120J UNIT Volts 1200 30 215 99 450 450A @ 1200V 625 -55 to 150 300 Amps Switching Safe Operating Area @ TJ = 150C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. Watts C STATIC ELECTRICAL CHARACTERISTICS Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 6mA) Gate Threshold Voltage (VCE = VGE, I C = 6mA, Tj = 25C) MIN TYP MAX Units 1200 5.0 1.4 5.8 1.7 2.08 100 2 6.5 2.1 Collector-Emitter On Voltage (VGE = 15V, I C = 150A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 150A, Tj = 125C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25C) 2 Volts I CES I GES RG(int) Gate-Emitter Leakage Current (VGE = 20V) Integrated Gate Resistor 600 5 nA CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com 050-7608 Rev B 11-2005 Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125C) A TBD DYNAMIC CHARACTERISTICS Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge 3 APT150GN120J Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VCE = 600V I C = 150A TJ = 150C, R G = 4.3 7, VGE = 15V, L = 100H,VCE = 1200V Inductive Switching (25C) VCC = 800V VGE = 15V I C = 150A VGE = 15V MIN TYP MAX UNIT pF V nC 9500 500 400 9.5 800 70 430 450 55 65 675 85 22 27 15 55 65 780 175 23 35 22 mJ ns ns A Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy 44 55 4 5 RG = 1.0 7 TJ = +25C Turn-on Switching Energy (Diode) 6 mJ Inductive Switching (125C) VCC = 800V VGE = 15V I C = 150A Turn-on Switching Energy (Diode) 66 TJ = +125C RG = 1.0 7 THERMAL AND MECHANICAL CHARACTERISTICS Symbol RJC RJC VIsolation WT Characteristic Junction to Case (IGBT) Junction to Case (DIODE) RMS Voltage (50-60Hz Sinusoidal Package Weight Waveform from Terminals to Mounting Base for 1 Min.) MIN TYP MAX UNIT C/W Volts 0.20 N/A 2500 1.03 29.2 10 1.1 oz gm Ib*in N*m Torque Maximum Terminal & Mounting Torque 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 11-2005 Rev B 050-7608 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 RG is external gate resistance, not including RG(int) nor gate driver impedance. (MIC4452) APT Reserves the right to change, without notice, the specifications and information contained herein. TYPICAL PERFORMANCE CURVES 300 250 200 150 100 50 0 V GE = 15V 400 350 APT150GN120J 6.5, 10 &15V 6V IC, COLLECTOR CURRENT (A) TJ = -55C TJ = 25C TJ = 125C IC, COLLECTOR CURRENT (A) 300 250 200 150 100 50 0 TJ = 175C 5.5V 5V 4.5V 4V 300 250 200 FIGURE 1, Output Characteristics(TJ = 25C) 250s PULSE TEST<0.5 % DUTY CYCLE 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) 16 VGE, GATE-TO-EMITTER VOLTAGE (V) 14 12 10 FIGURE 2, Output Characteristics (TJ = 125C) I = 150A C T = 25C J 0 5 10 15 20 25 30 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A) VCE = 240V VCE = 600V TJ = -55C 150 100 50 0 TJ = 25C TJ = 125C 0 2 4 6 8 10 12 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics 8 6 4 2 0 0 200 VCE = 960V 400 600 800 GATE CHARGE (nC) 1000 FIGURE 4, Gate Charge VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 3.5 3 2.5 2 1.5 1 0.5 VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 IC = 300A TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE IC = 300A IC = 150A IC = 75A IC = 150A IC = 75A 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 1.15 0 8 0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 300 IC, DC COLLECTOR CURRENT(A) VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) 1.10 1.05 1.00 0.95 0.90 0.85 0.80 0.75 250 200 150 100 50 0 -50 11-2005 050-7608 Rev B 0.70 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Threshold Voltage vs. Junction Temperature -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature 60 td(ON), TURN-ON DELAY TIME (ns) 50 40 30 20 td (OFF), TURN-OFF DELAY TIME (ns) VGE = 15V 1000 APT150GN120J 800 600 VGE =15V,TJ=125C VGE =15V,TJ=25C 400 10 T = 25C, or 125C J VCE = 800V RG = 1.0 L = 100H 200 0 50 100 150 200 250 300 350 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 400 350 300 tf, FALL TIME (ns) tr, RISE TIME (ns) 250 200 150 100 50 TJ = 25 or 125C,VGE = 15V RG = 1.0, L = 100H, VCE = 800V 0 0 50 100 150 200 250 300 350 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 250 0 VCE = 800V RG = 1.0 L = 100H 200 TJ = 125C, VGE = 15V 150 100 TJ = 25C, VGE = 15V 50 50 100 150 200 250 300 350 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 120,000 EON2, TURN ON ENERGY LOSS (J) 100,000 80,000 60,000 40,000 20,000 0 EOFF, TURN OFF ENERGY LOSS (J) V = 800V CE V = +15V GE R = 1.0 G 0 0 50 100 150 200 250 300 350 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 50,000 = 800V V CE = +15V V GE R = 1.0 G 0 RG = 1.0, L = 100H, VCE = 800V 0 TJ = 125C 40,000 TJ = 125C 30,000 20,000 10,000 TJ = 25C TJ = 25C 0 50 100 150 200 250 300 350 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 200,000 SWITCHING ENERGY LOSSES (J) = 800V V CE = +15V V GE T = 125C J 0 50 100 150 200 250 300 350 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current 120,000 SWITCHING ENERGY LOSSES (J) 100,000 80,000 60,000 40,000 20,000 0 Eoff,300A Eon2,150A Eoff,150A Eoff,75A Eon2,75A V = 800V CE V = +15V GE R = 1.0 G 0 Eon2,300A Eon2,300A 160,000 120,000 80,000 Eoff,300A Eon2,150A Eoff,150A Eoff,75A 11-2005 40,000 Rev B Eon2,75A 050-7608 5 10 15 20 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance 0 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature 0 TYPICAL PERFORMANCE CURVES 20,000 10,000 C, CAPACITANCE ( F) 500 Cies IC, COLLECTOR CURRENT (A) 500 450 400 350 300 250 200 150 100 50 APT150GN120J P 100 50 Coes Cres 10 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage 0 200 400 600 800 1000 1200 1400 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18,Minimim Switching Safe Operating Area 0 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0 D = 0.9 0.7 0.5 0.3 0.1 0.05 10-5 10-4 Note: ZJC, THERMAL IMPEDANCE (C/W) PDM t1 t2 SINGLE PULSE Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC t 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 1.0 30 RC MODEL Junction temp. (C) FMAX, OPERATING FREQUENCY (kHz) 0.0457 0.025 10 F 5 Power (watts) 0.133 0.569 = min (fmax, fmax2) 0.05 fmax1 = td(on) + tr + td(off) + tf max T = 125C J T = 75C C D = 50 % V = 800V CE R = 1.0 G fmax2 = Pdiss = 0.0221 Case temperature. (C) 30.8 Pdiss - Pcond Eon2 + Eoff TJ - TC RJC FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL 70 120 170 220 270 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current 1 20 050-7608 Rev B 11-2005 APT150GN120J APT100DQ120 10% Gate Voltage TJ = 125C td(on) V CC IC V CE tr 90% 5% Collector Current 10% 5% Collector Voltage A Switching Energy D.U.T. Figure 21, Inductive Switching Test Circuit Figure 22, Turn-on Switching Waveforms and Definitions 90% Gate Voltage td(off) 90% Collector Voltage tf 10% TJ = 125C 0 Collector Current Switching Energy Figure 23, Turn-off Switching Waveforms and Definitions SOT-227 (ISOTOP(R)) Package Outline 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 3.3 (.129) 3.6 (.143) 1.95 (.077) 2.14 (.084) 14.9 (.587) 15.1 (.594) * Emitter Collector * Emitter terminals are shorted internally. Current handling capability is equal for either Source terminal. 11-2005 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) Rev B * Emitter Dimensions in Millimeters and (Inches) ISOTOP(R) is a Registered Trademark of SGS Thomson. Gate 050-7608 ,019,522 ,182,234 5 ,089,434 5 ,045,903 5 APT's products are covered by one or more of U.S.patents 4,895,810 5 ll ,528,058 and foreign patents. US and Foreign patents pending. A Rights Reserved. ,434,095 5 ,231,474 5 ,283,202 5 ,748,103 5 ,256,583 4 ,503,786 5 5,262,336 6 |
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